Quick Summary
TOPCon (Tunnel Oxide Passivated Contact) is an advanced N-type silicon cell architecture. It uses an ultra-thin silicon oxide tunnel layer to drastically reduce electron recombination, boosting module efficiency to 22.5%+.
TOPCon cell manufacturing has emerged as the successor to traditional PERC cells because it leverages existing assembly lines while delivering higher cell performance and lower degradation rates.
TOPCon Advantages vs. Traditional PERC
- Higher Efficiency limits: Pushes commercial module efficiency bounds beyond 22.5%.
- Zero LID: N-type silicon structures do not suffer from Light-Induced Degradation (LID).
- Better Temperature Coefficient: Degrades less in high temperatures than P-type cells.
Frequently Asked Questions
What is N-type silicon?
N-type silicon is doped with phosphorus, giving it a negative charge. It is more resistant to metal impurities than P-type (boron-doped) silicon.